IGBT RJP30H2 TO-263-3L
It.№: 042499
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IGBT RJP30H2 TO-263-3L 360V 35A 250A PEAK 60W\nN Channel IGBT 360V 35A; 1. Trench gate and thin wafer technology (G6H-II series)\n2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ\n3. High speed switching: tf = 100 ns typ, tf = 180 ns typ\n4. Low leak current: ICES = 1 A max
