IGBT RJP30H1 TO-220F
It.№: 054954
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- Корпус: TO-220F
- Ампераж A: 30
- Волтаж V: 360
- IGBT транзистори
- RENESAS
Описание
Състояние: NEW / НОВ
;IGBT N-Ch 360V 30A PEAK 40W\nN Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series)\n2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ\n3. High speed switching: tf = 100 ns typ, tf = 180 ns typ\n4. Low leak current: ICES = 1 A max
;IGBT N-Ch 360V 30A PEAK 40W\nN Channel IGBT 360V 30A; 1. Trench gate and thin wafer technology (G6H-II series)\n2. Low collector to emitter saturation V: VCE(sat) = 1.4 V typ\n3. High speed switching: tf = 100 ns typ, tf = 180 ns typ\n4. Low leak current: ICES = 1 A max
Details
Корпус
TO-220F
Ампераж A
30
Волтаж V
360
